EDUCATIONAL TRAINING SYSTEMS

Model: C5

MOSFET CHARACTERISTICS

C5 0

Objectives

The purpose of this experiment is

  • To demonstrate the operation of a typical insulated gate FET.
  • To examine the relationship between the gate-to source voltage (VGS) the gate drain current (ID) and the drain-to source voltage (VDS) in an N-channel depletion mode IGFET.
  • To measure the corresponding VGS, ID, and VDS values and graphically plot those to form a set of drain characteristics values.

Features of the Trainer

Built in regulated power supply

     DC +15V /500mA.

Power Supply

     Voltage range : AC 100V - 230V.
     Frequency Range : 50 - 60Hz.

Housing

     It is mounted in an elegant ABS Plastic cabinet for better viewing and

     portability.

Dimension

     29cm x 20cm x 11cm

Weight

    1.5kgs

 

This trainer is a glass-epoxy printed circuit board and all the symbols screen-printed on the front panel so that it enables the student to conduct the experiments easily

Accessories

  • 2mm multi coloured moulded patch cords with daisying facility.
  • Computer simulated outputs and Step-By-Step detailed instructions are provided with the instruction manual.

 

 

 

 

 

 

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