EDUCATIONAL TRAINING SYSTEMS

Model: C4

FET CHARACTERISTICS

C4 1

Objectives

The purpose of this experiment is

  • To demonstrate the operation of a Field Effect Transistor (FET) characteristics and testing methods.
  • To examine the relationship between the gate-to-source voltage (VGS), drain current (ID) and the drain-to-source voltage (VDS) in an N channel junction FET.
  • To measure and record correspondingly the VGS, ID and VDS values and then plot these values to form a set of drain characteristic curves.
  • To complete the experiment using these curves to determine the transconductance of the FET.

Features of the Trainer

Built in regulated power supply

    DC ±15V /300 mA.

Power Supply

    Voltage range : AC 100V - 230V.
     Frequency Range : 50 - 60Hz.

Housing

    It is mounted in an elegant ABS Plastic cabinet for better viewing and

    portability.

Dimension

    29cm x 20cm x 11cm

Weight

    1.5kgs

 

This trainer is a glass-epoxy printed circuit board and all the symbols screen-printed on the front panel so that it enables the student to conduct the experiments easily

Accessories

  • 2mm multi coloured moulded patch cords with daisying facility.
  • Computer simulated outputs and Step-By-Step detailed instructions are provided with the instruction manual.

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